Beilstein J. Nanotechnol.2016,7, 1783–1793, doi:10.3762/bjnano.7.171
sample in order to make RAS control possible.
Keywords: broad area semiconductor lasers (BAL); dry-etch monitoring (RIE); preciseetchdepthcontrol; reflectance anisotropy spectroscopy (RAS); III–V semiconductors; Introduction
Reflectance anisotropy/difference spectroscopy (RAS/RDS) [1][2][3][4][5] is
our case, preciseetchdepthcontrol is essential.
To fabricate the described laser, a semiconductor layer sequence (sample of type B) is masked with the desired stripe pattern and the unmasked regions are deeply etched with reactive ion etching (lithographic process I, see Figure 5a). Here a soft
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Figure 1:
Color plot of the RAS signal during reactive ion etching (RIE) of a partially masked laser substrat...